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Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces

Identifieur interne : 01C224 ( Main/Repository ); précédent : 01C223; suivant : 01C225

Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces

Auteurs : RBID : Pascal:95-0102445

Descripteurs français

Pascal (Inist)
- Diode barrière Schottky, Or, Indium, Gallium Phosphure, Attaque chimique, Spectrométrie Auger, Influence, Contamination chimique, Impureté résiduelle, Etude expérimentale, Caractéristique courant tension, Composé binaire, Composé III-V, Analyse surface, Procédé fabrication.
Wicri :
- concept : Or.

English descriptors

KwdEn :
- Auger electron spectrometry, Binary compound, Chemical contamination, Chemical etching, Experimental study, Gallium Phosphides, Gold, III-V compound, Indium, Influence, Manufacturing process, Residual impurity, Schottky barrier diode, Surface analysis, Voltage current curve.

Abstract

n-Type GaP (111) and (110) surfaces etched with bromine-methanol 1% or H₂SO₄, H₂O₂, H₂O (3, 1, 1) have been studied by Auger electron spectroscopy. From this study we concluded that there is less oxide on a surface etched with the second solution. (Au) (In)/GaP schottky diode have been made by evaporating Au and In dots. Characteristic properties of these diodes, obtained from I (V) or C (V) measurements, have been compared. From this comparison, it becomes clear that the diode characteristics depend on the surface contamination, on the residual oxide layer and on the metal. The role of the surface structure the contamination and the metal have been deduced

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Pascal:95-0102445

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces</title>
<author><name sortKey="Ismail, A" uniqKey="Ismail A">A. Ismail</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Univ. Libanaise, fac. sci. I</s1>
<s2>Beyrouth</s2>
<s3>LBN</s3>
<sZ>1 aut.</sZ>
</inist:fA14>
<country>Liban</country>
<wicri:noRegion>Beyrouth</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Boumedienne, M" uniqKey="Boumedienne M">M. Boumedienne</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS Univ. Montpellier II sci. tech. Languedoc, lab. études surfaces interfaces composants, unité rech.</s1>
<s2>34095 Montpellier</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Lassabatere, L" uniqKey="Lassabatere L">L. Lassabatere</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>CNRS Univ. Montpellier II sci. tech. Languedoc, lab. études surfaces interfaces composants, unité rech.</s1>
<s2>34095 Montpellier</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Languedoc-Roussillon</region>
<settlement type="city">Montpellier</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">95-0102445</idno>
<date when="1995">1995</date>
<idno type="stanalyst">PASCAL 95-0102445 INIST</idno>
<idno type="RBID">Pascal:95-0102445</idno>
<idno type="wicri:Area/Main/Corpus">01D423</idno>
<idno type="wicri:Area/Main/Repository">01C224</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0038-1101</idno>
<title level="j" type="abbreviated">Solid-state electron.</title>
<title level="j" type="main">Solid-state electronics</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Auger electron spectrometry</term>
<term>Binary compound</term>
<term>Chemical contamination</term>
<term>Chemical etching</term>
<term>Experimental study</term>
<term>Gallium Phosphides</term>
<term>Gold</term>
<term>III-V compound</term>
<term>Indium</term>
<term>Influence</term>
<term>Manufacturing process</term>
<term>Residual impurity</term>
<term>Schottky barrier diode</term>
<term>Surface analysis</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Diode barrière Schottky</term>
<term>Or</term>
<term>Indium</term>
<term>Gallium Phosphure</term>
<term>Attaque chimique</term>
<term>Spectrométrie Auger</term>
<term>Influence</term>
<term>Contamination chimique</term>
<term>Impureté résiduelle</term>
<term>Etude expérimentale</term>
<term>Caractéristique courant tension</term>
<term>Composé binaire</term>
<term>Composé III-V</term>
<term>Analyse surface</term>
<term>Procédé fabrication</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Or</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">n-Type GaP (111) and (110) surfaces etched with bromine-methanol 1% or H<sub>2</sub>
SO<sub>4</sub>
, H<sub>2</sub>
O<sub>2</sub>
, H<sub>2</sub>
O (3, 1, 1) have been studied by Auger electron spectroscopy. From this study we concluded that there is less oxide on a surface etched with the second solution. (Au) (In)/GaP schottky diode have been made by evaporating Au and In dots. Characteristic properties of these diodes, obtained from I (V) or C (V) measurements, have been compared. From this comparison, it becomes clear that the diode characteristics depend on the surface contamination, on the residual oxide layer and on the metal. The role of the surface structure the contamination and the metal have been deduced</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0038-1101</s0>
</fA01>
<fA03 i2="1"><s0>Solid-state electron.</s0>
</fA03>
<fA05><s2>38</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ISMAIL (A.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>BOUMEDIENNE (M.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>LASSABATERE (L.)</s1>
</fA11>
<fA14 i1="01"><s1>Univ. Libanaise, fac. sci. I</s1>
<s2>Beyrouth</s2>
<s3>LBN</s3>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>CNRS Univ. Montpellier II sci. tech. Languedoc, lab. études surfaces interfaces composants, unité rech.</s1>
<s2>34095 Montpellier</s2>
<s3>FRA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA20><s1>497-501</s1>
</fA20>
<fA21><s1>1995</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>2888</s2>
<s5>354000057818520360</s5>
</fA43>
<fA44><s0>0000</s0>
</fA44>
<fA45><s0>22 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>95-0102445</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Solid-state electronics</s0>
</fA64>
<fA66 i1="01"><s0>GBR</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>n-Type GaP (111) and (110) surfaces etched with bromine-methanol 1% or H<sub>2</sub>
SO<sub>4</sub>
, H<sub>2</sub>
O<sub>2</sub>
, H<sub>2</sub>
O (3, 1, 1) have been studied by Auger electron spectroscopy. From this study we concluded that there is less oxide on a surface etched with the second solution. (Au) (In)/GaP schottky diode have been made by evaporating Au and In dots. Characteristic properties of these diodes, obtained from I (V) or C (V) measurements, have been compared. From this comparison, it becomes clear that the diode characteristics depend on the surface contamination, on the residual oxide layer and on the metal. The role of the surface structure the contamination and the metal have been deduced</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F03</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Diode barrière Schottky</s0>
<s5>14</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Schottky barrier diode</s0>
<s5>14</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Diodo barrera Schottky</s0>
<s5>14</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Or</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Gold</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="02" i2="X" l="GER"><s0>Gold</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Oro</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="03" i2="X" l="GER"><s0>Indium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Indio</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Gallium Phosphure</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Gallium Phosphides</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Galio Fosfuro</s0>
<s2>NC</s2>
<s2>FX</s2>
<s2>NA</s2>
<s5>17</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Attaque chimique</s0>
<s5>18</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Chemical etching</s0>
<s5>18</s5>
</fC03>
<fC03 i1="05" i2="X" l="GER"><s0>Chemisches Aetzen</s0>
<s5>18</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Ataque químico</s0>
<s5>18</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Spectrométrie Auger</s0>
<s5>20</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Auger electron spectrometry</s0>
<s5>20</s5>
</fC03>
<fC03 i1="06" i2="X" l="GER"><s0>Auger Spektrometrie</s0>
<s5>20</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Espectrometría Auger</s0>
<s5>20</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Influence</s0>
<s5>21</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Influence</s0>
<s5>21</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Influencia</s0>
<s5>21</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Contamination chimique</s0>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Chemical contamination</s0>
<s5>22</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Contaminación química</s0>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Impureté résiduelle</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Residual impurity</s0>
<s5>23</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Impureza residual</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Etude expérimentale</s0>
<s5>25</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Experimental study</s0>
<s5>25</s5>
</fC03>
<fC03 i1="10" i2="X" l="GER"><s0>Experimentelle Untersuchung</s0>
<s5>25</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Estudio experimental</s0>
<s5>25</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>26</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>26</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>26</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>66</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>66</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>66</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>67</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>67</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>67</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Analyse surface</s0>
<s5>68</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Surface analysis</s0>
<s5>68</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Análisis superficie</s0>
<s5>68</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Procédé fabrication</s0>
<s5>69</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Manufacturing process</s0>
<s5>69</s5>
</fC03>
<fC03 i1="15" i2="X" l="GER"><s0>Fertigungsverfahren</s0>
<s5>69</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Procedimiento fabricación</s0>
<s5>69</s5>
</fC03>
<fN21><s1>067</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces

Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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